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Image for Amorphous and Crystalline Silicon Carbide III : And Other Group IV-IV Materials - Proceedings of the 3rd International Conference, Howard University, Washington, D.C., April 11-13, 1990

Amorphous and Crystalline Silicon Carbide III : And Other Group IV-IV Materials - Proceedings of the 3rd International Conference, Howard University, Washington, D.C., April 11-13, 1990

By: etc.(Edited by) Harris, G.L.(Edited by) Spencer, M.G. (Howard University, Washington DC, USA)(Edited by) Yang, C.Y. (Santa Clara University, California, USA)(Edited by)

Part of the Springer proceedings in physics series
3540536035 / 9783540536031
Hardback
537.6223
26/06/1992
Usually dispatched within 4 weeks
Germany
138 x 216 mm, 695 grams 384 pages, 265 illustrations, 17 tables
Professional & Vocational  Learn More Postgraduate, Research & Scholarly

This volume, the proceedings of a conference that attracted over one hundredparticipants, details the status of worldwide research into silicon carbide and other IV-IV materials.

This is an active field and several exciting new results are presented: solid-solution growth if SiC compounds, formation of SiGe heterostructures by ion implantation, an amorphous SiC/Si heterojunction prepared by the polymer route, and improved SiC LEDs and FETs.

BIC:

PHFC Condensed matter physics (liquid state & solid state physics), TGM Materials science

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