Amorphous and Crystalline Silicon Carbide III : And Other Group IV-IV Materials - Proceedings of the 3rd International Conference, Howard University, Washington, D.C., April 11-13, 1990

This volume, the proceedings of a conference that attracted over one hundredparticipants, details the status of worldwide research into silicon carbide and other IV-IV materials.

This is an active field and several exciting new results are presented: solid-solution growth if SiC compounds, formation of SiGe heterostructures by ion implantation, an amorphous SiC/Si heterojunction prepared by the polymer route, and improved SiC LEDs and FETs.