Silicon Carbide and Related Materials, 1995 : Proceedings of the Sixth International Conference, Kyoto, Japan, 18-21 September 1995

The special advantages of silicon carbide and related materials such as III-V nitrides in applications in hostile environments and for blue-light emitting diodes continue to stimulate research and development activity.

The International Conference on Silicon Carbide and Related Materials is now the established forum for exchanging information on recent advances in this subject.

This volume includes papers from the 6th ICSRM held in Kyoto in September 1995, covering the field of silicon carbide and related materials research, from the fundamental physics of these materials, through their growth, control of properties, characterization, surface and interface modification, device processing and fabrication, to the latest advances in simulation and modelling.