Silicon Carbide and Related Materials 2006

Volume is indexed by Thomson Reuters CPCI-S (WoS).Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond are wide-bandgap semiconductors which also possess extraordinary chemical, electrical and optical properties that make them uniquely attractive for the fabrication of high-power and high-frequency electronic devices, as well as of light-emitters and sensors which have to survive harsh operating conditions.This collection closely reflects the latest experimental and theoretical advances made in this field; divided into the sub-sections: SiC Bulk Growth, SiC Epitaxy, SiC Characterization and Theory, SiC Processing, SiC Devices and Nitrides and Related Materials.The impressive progress reported here will serve as a source of stimulating ideas for anyone working with these materials.Over the course of these two volumes, the editors (of the NASA Glenn Research Center, U. of South Florida, and U. of Pittsburgh) present 421 papers (35 being invited or plenary) from the September 2005 International Conference on Silicon Carbide and Related Materials, these materials being wide-bandgap semiconductors with properties that make them useful for the fabrication of high-power and high-frequency electronic devices, as well as light-emitters and sensors.

The first volume contains papers that were presented in technical sessions on silicon carbide (SiC) bulk growth; SiC homoepitaxial, heteropolytic, and heteroepitaxial growth; physical properties and characterization issues including stacking faults, point defects, impurities, surfaces and interfaces, fundamental properties, and wafer mapping; and porous SiC and SiC nanoparticlses and nanowires.

The second volume contains the papers from the technical sessions on implantation and doping of SiC, contacts, oxides, chemical-mechanical polishing of SiC, micromachining, and other processing topics; unipolar devices, bipolar devices, and sensors and detectors; III-nitrides (covering growth of III-nitrides, physical properties and characterization, surfaces and interfaces, and devices); and related materials.