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Formation and Properties of Dislocations During Crystal Growth of Bulk Silicon Carbide by the Physical Vapor Transport Method

Part of the Berichte Aus Der Halbleitertechnik series
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£32.53
Product Details
Shaker Verlag GmbH, Germany
3832274243 / 9783832274245
Paperback / softback
11/08/2008
Germany
155 pages, 83 illustrations
148 x 210 mm
Professional & Vocational/Postgraduate, Research & Scholarly Learn More